2SK3668 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3668
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3668 is N-channel DMOS FET device that
features a low on-state resistance, low charge and
excellent switching characteristics, designed for high
voltage applications such as high intensity discharge
lamp drive.
FEATURES
• Low gate charge
QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
5 Single Avalanche Energy ^Note2
EAS
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3668-ZK
TO-263 (MP-25ZK)
(TO-263)
400
V
±30
V
±10
A
±34
A
1.5
W
100
W
150
°C
–55 to +150 °C
10
A
8
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
5
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistane
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16547EJ2V0DS00 (2nd edition)
Date Published April 2003 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
2002