2SK2478 Datasheet, PDF (5/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
VGS = 10 V
0
ID = 1 A
–50
0
50 100 150
Tch - Channel Temperature - ˚C
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
100
10
1.0
1.0
Coss
Crss
10
100
VDS - Drain to Source Voltage - V
1 000
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
1.0
0.1
1.0
10
100
ID - Drain Current - A
2SK2478
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 10 V
VGS = 0 V
1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
tr
td(off)
tf
td(on)
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1.0
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
16
ID = 2 A
14
600
VDD = 450 V
300 V
150 V
400
12
10
VGS
8
6
200
4
VDS
2
0
0
6
12
18
Qg - Gate Charge - nC
5