2SK2478 Datasheet, PDF (4/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2478
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-a) = 62.5(˚C/W)
10
Rth(ch-c) = 4.17(˚C/W)
1
0.1
0.01
0.001
10 µ 100 µ
1m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
TA = 25 ˚C
10
100 1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 20 V
Pulsed
TA= –25 ˚C
1.0
25 ˚C
75 ˚C
125 ˚C
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
10
ID = 2 A
1A
0.4 A
5
0.01
0.01
0.1
1.0
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
VGS = 10 V
10
5
0
10
20
30
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1 mA
5
0
0.01
0.1
1.0
10
ID - Drain Current - A
0
–50
0
50
100 150
Tch - Channel Temperature - ˚C
4