2SJ687 Datasheet, PDF (5/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
VGS = −2.5 V
10
−4.5 V
5
0
-75
ID = −10 A
Pulsed
-25
25
75 125 175
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
VDD = −10 V ^td(on)
VGS = −4.5 V
RG = 3 Ω
10
-0.1
-1
-10
ID - Drain Current - A
-100
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
−4.5 V
-10
−2.5 V
VGS = 0 V
-1
-0.1
-0.01
0
Pulsed
-0.5
-1
-1.5
VF(S-D) - Source to Drain Voltage - V
2SJ687
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
-0.01
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-25
-5
VDD = −16 V
-20
−10 V
-4
−4 V
-15
-3
VGS
-10
-2
-5
0
0
VDS
-1
ID = −20 A
0
10 20 30 40 50 60
QG - Gate Charge - nC
10000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
di/dt = −100 A/μs
VGS = 0 V
10
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18719EJ2V0DS
5