2SJ687 Datasheet, PDF (4/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ687
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-60
VGS = −4.5 V
-40
−2.5 V
-20
Pulsed
0
0
-1
-2
-3
VDS - Drain to Source Voltage - V
<R>
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-2
-1.5
-1
-0.5
VDS = −10 V
ID = −1 mA
0
-75
-25
25
75 125 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
ID = −10 A
Pulsed
40
30
20
10
0
0
-5
-10
-15
VGS - Gate to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-100
-10
VDS = −10 V
Pulsed
-1
-0.1
-0.01
-0.001
-0.0001
0
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
-1
-2
-3
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
10
1
0.1
0.01
-0.001 -0.01
25°C
75°C
125°C
150°C
VDS = −10 V
Pulsed
-0.1
-1
-10 -100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
Pulsed
50
40
30
20
VGS = −2.5 V
10
−4.5 V
0
-0.1
-1
-10
ID - Drain Current - A
-100
4
Data Sheet D18719EJ2V0DS