UPA2727UT1A Datasheet, PDF (4/6 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

μ PA2727UT1A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
2.5
2
1.5
1
0.5
0
-75
VDS = 10 V
ID =1 mA
-25
25
75 125 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
20
10
0
0.1
VGS = 4.5 V
10 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
ID = 8 A
Pulsed
20
VGS = 4.5 V
15
10
10 V
5
0
-75
-25
25
75 125 175
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −55°C
25°C
75°C
10
125°C
1
0.1
0.1
VDS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
ID = 8 A
Pulsed
20
10
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
4
Data Sheet G18300EJ1V0DS