UPA2727UT1A Datasheet, PDF (1/6 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2727UT1A
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A)
RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A)
• Low QGD
QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A)
• Thin type surface mount package with heat spreader (8-pin HVSON)
• RoHS Compliant
1
8
2
7
3
6
4
5
6 ±0.2
5.4 ±0.2
0.10 S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
30
V
±20
V
Drain Current (DC)
ID(DC)
±16
A
Drain Current (pulse) ^Note1
ID(pulse)
±96
A
Total Power Dissipation ^Note2
PT1
1.5
W
Total Power Dissipation (PW = 10 sec) ^Note2 PT2
4.6
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg
−55 to +150
°C
IAS
16
A
EAS
26
mJ
1
0.2
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
3.65 ±0.2
0.6 ±0.15
0.7 ±0.15
EQUIVALENT CIRCUIT
Drain
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance ^Note2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
2.0
°C/W
°C/W
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18300EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2006, 2007