UPA2510 Datasheet, PDF (4/7 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µ PA2510
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-80
Pulsed
-60
VGS = −10.0 V
-40
−4.5 V
-20
0
0
-0.2 -0.4 -0.6 -0.8
-1
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-2
VDS = −10.0 V
-1.8
ID = −1.0 mA
-1.6
-1.4
-1.2
-1
-0.8
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
25
Pulsed
20
15
VGS = −4.5 V
−10.0 V
10
5
0
-0.1
-1
-10
ID - Drain Current - A
-100
FORWARD TRANSFER CHARACTERISTICS
-100
-10
VDS = −10.0 V
Puls ed
-1
-0.1
TA = 125°C
75°C
25°C
−25°C
-0.01
-0.001
-0.5 -1 -1.5 -2 -2.5 -3 -3.5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10.0 V
Pulsed
10
TA = −25°C
1
25°C
75°C
125°C
0.1
0.01
-0.01
-0.1
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
ID = −9.0 A
20
Pulsed
15
10
5
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
4
Data Sheet G16683EJ1V0DS