UPA2510 Datasheet, PDF (1/7 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2510
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA2510, which has a heat spreader, is P-channel
MOS Field Effect Transistor designed for power management
applications of notebook computers.
FEATURES
• µ PA2510 has a thin surface mount package with a heat
spreader. The land size is same as 8-pin TSSOP.
• Low on-state resistance
RDS(on)1 = 10.1 mΩ MAX. (VGS = −10.0 V, ID = −9.0 A)
RDS(on)2 = 14.0 mΩ MAX. (VGS = −4.5 V, ID = −9.0 A)
• Low Ciss: 3000 pF TYP. (VDS = −10.0 V, VGS = 0 V)
ORDERING INFORMATION
PART NUMBER
µ PA2510TM
PACKAGE
8PIN HWSON
PACKAGE DRAWING (Unit: mm)
1
8
2
7
3
6
4
5
5.8 ±0.1
6.4 ±0.1
0.10 S
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) ^Note1
Drain Current (pulse) ^Note2
Total Power Dissipation ^Note1
VGSS
ID(DC)
ID(pulse)
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current ^Note3
IAS
Single Avalanche Energy ^Note3
EAS
0.75 ±0.15
4.15 ±0.2
−30.0
V
m20.0
V
m18.0
A
m72.0
A
2.7
W
150
°C
−55 to +150 °C
−18.0
A
32.4
mJ
Notes 1. Mounted on FR-4 board of 25 cm² x 1.6 mm, PW ≤ 10 sec
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20.0 → 0 V
0.85 ±0.15
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16683EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2003