UPA1500B Datasheet, PDF (4/8 Pages) NEC – N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000 _{Single Pulse.}
For each Circuit
Rth(CH-A) 4Circuits
3Circuits
2Circuits
1Circuit
100
Rth(CH-C)
10
µPA1500B
1.0
0.1
100µ
1m
10 m
100 m
1
10
PW - Pulse Width - sec
100
1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = -25 ˚C
25 ˚C
75 ˚C
125 ˚C
1.0
1
0.1
1.0
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
300
Pulsed
200
VGS = 4 V
VGS = 10 V
100
0
0.1
1.0
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
700
Pulsed
600
500
400
ID = 0.6 A
300
2A
3A
200
100
0
10
20
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2.0
ID = 1 mA
1.5
1.0
0.5
0
–50
0
50
100
150
TCH - Channel Temperature - ˚C
4