NP82N055CHE_07 Datasheet, PDF (4/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP82N055EHE, NP82N055KHE, NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure.3 FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R(^D_V^{S(GoSn) =Li1m0itVed)}
ID(pulse)
ID(DC)
LimPoitweder
DC
Dissipation
1 _ms
PW ₌
100 _μs
10
μ_s
1
TC = 25°C
0.1 ^{Single Pulse}
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
350
300 _{289 mJ}
240 mJ
250
200
IAS = 17 A
49 A
72 A
150
100
51 mJ
50
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - °C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
0.1
0.01
10 μ 100 μ
1m
10 m 100 m
1
PW - Pulse Width - s
Rth(ch-C) = 0.92°C/W
Single Pulse
10
100
1000
4
Data Sheet D14138EJ6V0DS