NP82N055CHE_07 Datasheet, PDF (2/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP82N055EHE, NP82N055KHE, NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C) ^Note1
ID(DC)
±82
A
Drain Current (pulse) ^Note2
ID(pulse)
±300
A
Total Power Dissipation (TA = 25°C)
PT
1.8
W
Total Power Dissipation (TC = 25°C)
PT
163
W
Channel Temperature
Tch
175
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg
−55 to +175 °C
IAS
72/49/17
A
EAS
51/240/289 mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.92
83.3
°C/W
°C/W
2
Data Sheet D14138EJ6V0DS