NP80N055 Datasheet, PDF (4/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NP80N055CLE, NP80N055DLE, NP80N055ELE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 _Pulsed
10
TA = −50˚C
25˚C
1
75˚C
150˚C
175˚C
0.1
0.01
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
5
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
Pulsed
VGS =10 V
160
5V
120
4.5 V
80
40
00
1
2
3
4
5
VDS - Drain to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS =10V}
Pulsed
10
TA = 175˚C
75˚C
1
25˚C
−50˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
20
VGS = 4.5 V
5V
10 V
10
0
1
10
100
1000
ID - Drain Current - A
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
ID = 40 A
10
0
0 2 4 6 8 10 12 14 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 µA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14097EJ3V0DS