NP80N055 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A)
• Low Ciss : Ciss = 2900 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
NP80N055CLE
NP80N055DLE
NP80N055ELE
PACKAGE
TO-220AB
TO-262
TO-263
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
V
Gate to Source Voltage
Drain Current (DC) ^Note1
Drain Current (Pulse) ^Note2
VGSS
±20
V
ID(DC)
±80
A
ID(pulse)
±200
A
Total Power Dissipation (TA = 25 °C)
PT
1.8
W
Total Power Dissipation (TC = 25 °C)
PT
Single Avalanche Current ^Note3
IAS
Single Avalanche Energy ^Note3
EAS
120
W
45 / 30 / 10
A
2.0 / 90 / 100 mJ
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to +175 °C
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW ≤ 10 µs, Duty cycle ≤ 1 %
3. Starting Tch = 25 °C, RG = 25 Ω , VGS = 20 V→0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.25
°C/W
Channel to Ambient
Rth(ch-A)
83.3
°C/W
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14097EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
1999,2000