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NP80N03CLE Datasheet, PDF (4/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
100
10
TA = −50˚C
25˚C
75˚C
150˚C
1
175˚C
0.1 1
2
3
4
5
6
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS = 10 V
Pulsed
10
TA = 175˚C
75˚C
1
25˚C
−50˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
20
VGS = 4.5 V
5V
10
10 V
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
Pulsed
350
VGS = 10 V
300
250
200
5V
150
100
4.5 V
50
0
0.0
1.0
2.0
3.0
4.0
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
10
ID = 40 A
0
0 2 4 6 8 10 12 14 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 µA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14032EJ4V0DS