NP80N03CLE Datasheet, PDF (2/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET

NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Gate to Source Leakage Current
Gate to Source Threshold Voltage
IGSS
VGS(th)
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 40 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 40 A
RDS(on)2 VGS = 5 V, ID = 40 A
RDS(on)3 VGS = 4.5 V, ID = 40 A
Input Capacitance
Ciss
VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 40 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 1 Ω
Fall Time
tf
Total Gate Charge 1
QG1 VDD = 24 V, VGS = 10 V, ID = 80 A
Total Gate Charge 2
QG2
VDD = 24 V
Gate to Source Charge
QGS
VGS = 5 V
Gate to Drain Charge
QGD ID = 80 A
Body Diode Forward Voltage
VF(S-D) IF = 80 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 80 A, VGS = 0 V
Qrr
di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
10 µA
±10 µA
1.5 2.0 2.5 V
20 41
S
5.3 7.0 mΩ
6.8 9.0 mΩ
7.5 11 mΩ
2600 3900 pF
590 890 pF
270 490 pF
20 44 ns
12 31 ns
60 120 ns
14 35 ns
48 72 nC
28 42 nC
10
nC
14
nC
1.0
V
34
ns
22
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
2
Data Sheet D14032EJ4V0DS