NP70N04MUG Datasheet, PDF (4/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
200
100
VGS = 10 V
Pulsed
0
0
0.5
1
1.5
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3.5
3
2.5
2
1.5
1
VDS = VGS
0.5
ID = 250 μA
0
-75 -25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
8
VGS = 10 V
Pulsed
6
4
2
0
1
10
100
1000
ID - Drain Current - A
NP70N04MUG
FORWARD TRANSFER CHARACTERISTICS
1000
100
Tch = −55°C
25°C
75°C
10
150°C
175°C
1
VDS = 10 V
Pulsed
0.1
0
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
25°C
75°C
150°C
175°C
10
1
0.1
VDS = 5 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
ID = 35 A
8
Pulsed
6
4
2
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D18664EJ3V0DS