NP70N04MUG Datasheet, PDF (3/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP70N04MUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
<R>
FORWARD BIAS SAFE OPERATING AREA
1000
100
R^D_(V^S(oGnS)
Limit
= ^{1i 0}
ed
V)
ID(DC)
ID(pulse)
DC
PW
= _{1i00 μs}
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1
TC = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth(ch-A) = 83.3°C/Wi
1
Rth(ch-C) = 1.30°C/Wi
0.1
0.01
100 μ
1m
10 m 100 m
1
Single pulse
10
100
1000
PW - Pulse Width - s
Data Sheet D18664EJ3V0DS
3