NP55N04SUG Datasheet, PDF (4/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP55N04SUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
200
VGS = 10 V
150
100
50
0
0
Pulsed
0.4 0.8 1.2 1.6
2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.5
3
2.5
2
1.5
1
0.5
0
-100
VDS = VGS
ID = 250 μA
-50 0 50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6
4
VGS = 10 V
2
Pulsed
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10
1
TA = −55°C
25°C
125°C
0.1
175°C
0.01
0.001
0
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = −55°C
25°C
125°C
175°C
1
0.1
1
10
100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
8
28 A
6
ID = 55 A
4
2
Pulsed
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
4
Data Sheet D17401EJ2V0DS