NP55N04SUG Datasheet, PDF (1/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP55N04SUG
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The NP55N04SUG is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP55N04SUG
TO-252 (MP-3ZK)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low input capacitance
Ciss = 3400 pF TYP. (VDS = 25 V)
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
VGSS
ID(DC)
ID(pulse)
<R> Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Repetitive Avalanche Current ^Note2
IAR
Repetitive Avalanche Energy ^Note2
EAR
40
V
±20
V
±55
A
±220
A
77
W
1.2
W
175
°C
−55 to +175 °C
30
A
90
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
<R> Channel to Case Thermal Resistance
Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
1.95
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17401EJ2V0DS00 (2nd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004