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BP1A4A Datasheet, PDF (4/6 Pages) NEC – On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
BP1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = −22 V, IE = 0
DC current gain
h Note 2
FE1
VCE = −2.0 V, IC = −0.1 A
DC current gain
h Note 2
FE2
VCE = −2.0 V, IC = −0.5 A
DC current gain
h Note 2
FE3
VCE = −2.0 V, IC = −0.7 A
Low level output voltage
V Note 2
OL
VIN = −5.0 V, IC = −0.2 A
Low level input voltage
V Note 2
IL
VCE = −5.0 V, IC = −100 µA
Input resistance
R1
E-to-B resistance
R2
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
BP1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
ICBO
h Note 2
FE1
h Note 2
FE2
h Note 2
FE3
V Note 2
OL
V Note 2
IL
Input resistance
R1
E-to-B resistance
R2
Note 2 PW≤350 µs, duty cycle≤2 %
Conditions
VCB = −22 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −0.7 A
VIN = −5.0 V, IC = −0.1 A
VCE = −5.0 V, IC = −100 µA
BP1 SERIES
MIN.
TYP.
MAX.
Unit
−100
nA
200
−
100
−
50
−
−0.45
V
−0.3
V
3.29
4.7
6.11
kΩ
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
200
−
100
−
50
−
−0.4
V
−0.3
V
7
10
13
kΩ
7
10
13
kΩ
4
Data Sheet D11740EJ2V0DS