BP1A4A Datasheet, PDF (2/6 Pages) NEC – On-chip resistor PNP silicon epitaxial transistor For mid-speed switching

BP1 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base volgate
VCBO
−25
V
Colletor to emitter voltage
VCEO
−25
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−0.7
A
Collector current (Pulse)
I ^{Note 1}
C(pulse)
−1.0
A
Base current (DC)
IB(DC)
−0.02
A
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note 1 PW ≤ 10 ms, duty cycle ≤ 50 %
BP1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = −22 V, IE = 0
DC current gain
h Note 2
FE1
VCE = −2.0 V, IC = −0.1 A
DC current gain
h Note 2
FE2
VCE = −2.0 V, IC = −0.5 A
DC current gain
h Note 2
FE3
VCE = −2.0 V, IC = −0.7 A
Collector saturation voltage
V Note 2
CE(sat)
IC = −0.3 A, IB = −6 mA
Low level input voltage
V Note 2
IL
VCE = −5.0 V, IC = −100 µA
Input resistance
R1
E-to-B resistance
R2
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
MIN.
TYP.
MAX.
Unit
−100
nA
200
−
100
−
50
−
−0.28
−0.4
V
−0.3
V
−
−
−
Ω
7
10
13
kΩ
BP1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = −22 V, IE = 0
DC current gain
h Note 2
FE1
VCE = −2.0 V, IC = −0.1 A
DC current gain
h Note 2
FE2
VCE = −2.0 V, IC = −0.5 A
DC current gain
h Note 2
FE3
VCE = −2.0 V, IC = −0.7 A
Low level output voltage
V Note 2
OL
VIN = −5.0 V, IC = −0.3 A
Low level input voltage
V Note 2
IL
VCE = −5.0 V, IC = −100 µA
Input resistance
R1
E-to-B resistance
R2
Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %
MIN.
TYP.
MAX.
Unit
−100
nA
150
350
−
100
300
−
50
200
−
−0.30
−0.4
V
−0.3
V
329
470
611
Ω
3.29
4.7
6.11
kΩ
2
Data Sheet D11740EJ2V0DS