2SK2487 Datasheet, PDF (4/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2487
1 000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-a) = 41.7(˚C/W)
10
Rth(ch-c) = 0.89(˚C/W)
1
0.1
0.01
0.001
10 µ
100 µ
1m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
Tc = 25 ˚C
10
100 1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 20 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
10 TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1
2.0
ID = 8 A
4A
1.6 A
1.0
1
1
0.1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.5
Pulsed
VGS = 10 V
1.0
0.5
0
1.0
10
100
ID - Drain Current - A
0
10
20
30
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
4
ID = 1 mA
3
2
1
0
–50
0
50
100 150
Tch - Channel Temperature - ˚C
4