2SK2487 Datasheet, PDF (2/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2487
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS (on)
VGS (off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
QG
QGS
QGD
VF (S-D)
trr
Qrr
MIN.
2.5
3.0
TYP.
1.1
2 100
310
60
30
20
130
23
65
11
29
1.0
770
5.0
MAX.
1.6
3.5
100
±100
UNIT
Ω
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
TEST CONDITIONS
VGS = 10 V, ID = 4.0 A
VDS = 10 V, ID = 1 mA
VDS = 20 V, ID = 4.0 A
VDS = VDSS, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 4.0 A
VGS = 10 V
VDD = 150 V
RG = 10 Ω
ID = 8.0 A
VDD = 450 V
VGS = 10 V
IF = 8.0 A, VGS = 0
IF = 8.0 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25 Ω
L
PG
50 Ω
VDD
VGS = 20 - 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
PG.
RG
RG = 10 Ω
VGS
0
t
t = 1 us
Duty Cycle ≤ 1 %
RL
VGS
VGS
Wave Form
0 ^{10 %}
VDD
ID
VGS (on)
90 %
ID
Wave Form
0 ^{10 %}
td (on)
ID
tr
td (off)
90 %
90 %
10 %
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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