2SC5508 Datasheet, PDF (4/16 Pages) NEC – NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

2SC5508
Gain Characteristics
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Frequency
40
35
VCE = 2 V
IC = 20 mA
MSG
30
25
|S21e|²
20
MAG
15
10
5
0
0.1
1.0
10.0
Frequency f (GHz)
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
30
f = 1 GHz
VCE = 2 V
25
MSG
MAG
20
|S21e|²
15
10
5
0
1
10
100
Collector Current IC (mA)
Output Characteristics
Output Power, Collector Current vs. Input Power
20
125
f = 1 GHz
VCE = 2 V
15
Pout ₁₀₀
10
75
5
IC ⁵⁰
0
25
–5
0
–20 –15 –10
–5
0
5
Input Power Pin (dBm)
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
30
f = 2 GHz
VCE = 2 V
25
20
MSG
MAG
15
|S21e|²
10
5
0
1
10
100
Collector Current IC (mA)
Output Power, Collector Current vs. Input Power
20
125
f = 2 GHz
VCE = 2 V
15
Pout ₁₀₀
10
75
5
50
IC
0
25
–5
0
–20 –15 –10
–5
0
5
Input Power Pin (dBm)
4
Preliminary Data Sheet P13865EJ1V0DS00