2SC5508 Datasheet, PDF (2/16 Pages) NEC – NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

2SC5508
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
Emitter Cut-off Current
DC Current Gain
IEBO
h ^{Note 1}
FE
VEB = 1 V, IC = 0
VCE = 2 V, IC = 5 mA
RF Characteristics
Reverse Transfer Capacitance
C Note 2
re
VCB = 2 V, IE = 0, f = 1 MHz
Gain Bandwidth Product
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
Noise Figure
Insertion Power Gain
Maximum Available Power Gain
Maximum Stable Power Gain
Output Power at 1 dB
Compression Point
Output Power at Third Order
Intercept Point
NF
|S21e|²
MAG^{Note 3}
MSG^{Note 4}
P-1
OIP3
VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA^{Note 5}, f = 2 GHz
VCE = 2 V, IC = 20 mA^{Note 5}, f = 2 GHz
MIN. TYP. MAX.
–
–
200
–
–
200
50
70
100
–
0.18 0.24
20
25
–
–
1.1
1.5
14
17
–
–
19
–
–
20
–
–
11
–
–
22
–
Unit
nA
nA
–
pF
GHz
dB
dB
–
dB
dBm
–
Notes 1. Pulse measurement PW ≤ 350 µs, Duty cycle ≤ 2 %
2. Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3. MAG = ^S21
S12
k–
k² – 1
4.
MSG = ^S21
S12
5. Collector current when P-1 is output
hFE CLASSIFICATION
Rank
Marking
hFE
FB
T79
50 to 100
2
Preliminary Data Sheet P13865EJ1V0DS00