UPG110B Datasheet, PDF (3/3 Pages) NEC – 2-8 GHZ WIDE-BAND AMPLIFIER

TYPICAL SCATTERING PARAMETERS
UPG110B
VDD = 8V, IDD = 135 mA
FREQUENCY
S11
GHZ
0.05
0.10
0.20
0.40
0.60
0.80
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
MAG
0.375
0.249
0.146
0.103
0.074
0.047
0.013
0.131
0.230
0.310
0.361
0.415
0.437
0.433
0.385
0.321
0.298
0.382
0.475
0.548
0.554
0.460
0.585
0.771
0.769
ANG
-78
-101
-134
-164
-178
171
125
-68
-91
-113
-132
-150
-173
165
129
87
40
-4
-36
-57
-73
-76
-57
-71
-82
S21
MAG
1.075
2.899
4.321
5.421
5.860
6.068
5.176
4.863
4.579
4.179
3.879
3.749
3.845
3.946
4.104
4.233
4.354
3.848
3.553
3.334
3.290
3.530
3.178
1.665
0.871
ANG
14
-50
-123
-177
151
119
92
53
5
-40
-81
-120
-159
158
114
67
14
-35
-80
-125
-173
132
70
9
-28
OUTLINE DIMENSIONS (Units in mm)
UPG110B
PACKAGE OUTLINE FA
4.5 MAX
3
LEAD 1 & 3
0.6 ± 0.06
UPG110B, UPG110P
S12
MAG
0.001
0.001
0.001
0.002
0.003
0.006
0.008
0.006
0.006
0.007
0.008
0.009
0.010
0.012
0.014
0.016
0.015
0.015
0.015
0.017
0.022
0.032
0.047
0.057
0.086
ANG
-171
143
133
97
88
64
38
0
-16
-31
-45
-60
-74
-89
-110
-134
-164
-171
177
164
153
141
116
83
53
S22
MAG
0.967
0.862
0.648
0.384
0.224
0.182
0.338
0.103
0.074
0.161
0.189
0.180
0.177
0.207
0.282
0.364
0.357
0.294
0.251
0.222
0.216
0.175
0.269
0.512
0.558
ANG
-26
-51
-85
-132
-157
-126
-152
127
-96
-120
-137
-144
-142
-136
-141
-160
167
143
104
51
-1
-21
9
-23
-50
K
S21
dB
25.7
0.6
41.6
9.2
65.8
12.7
38.9
14.7
26.7
15.4
13.3
15.7
10.7
14.3
16.7
13.7
17.2
13.2
15.1
12.4
13.6
11.8
11.9
11.5
10.2
11.7
8.2
11.9
6.7
12.3
5.7
12.5
6.0
12.8
6.7
11.7
6.7
11.0
5.8
10.5
4.5
10.3
3.4
11.0
2.2
10.0
2.0
4.4
2.3
-1.2
VDD
50 to 100 µm
UPG110P (CHIP)
39 pF
200 to 500 µm
VDD
1.1 mm
LESS THAN 300 µm
GND
5
2
4.6 MAX
4
500 to
1000 µm
IN
OUT
200 to
500 µm
0.1 ± 0.06
4.1 MIN
0.7
+0.2
-0.1
1. VDD
2. In
3. Non Connection
4. Out
Case: GND
4.1 MIN
1
LEAD 2 & 4
0.4 ± 0.06
1.48 MAX
1
GND
2
3
GND GND
4
GND
1.3 mm
LESS THAN 200 µm
Bonding Pad Size: 200 µm x 200 µm
RECOMMENDED CHIP ASSEMBLY CONDITIONS
DIE ATTACHMENT
Atmosphere: N2 gas
Temperature: 320± 5°C
AuSn Preform: UPG100P, 101P, 103P 0.5 x 0.5 x 0.05 (mm), 1 pc
UPG102P
1.2 x 1.2 x 0.05 (mm), 1 pc
*The hard solder such as AuSi or AuGe which has
higher melting point than AuSn should not be used.
Base Material: CuW, Cu, KV (Other material should not be used)
Epoxy Die Attach is not recommended.
BONDING
Machine:
TCB (USB is not recommended)
Wire:
30 µm diameter Au wire
Temperature: 260 ± 10°C
Strength:
44 ± 5g
Atmosphere: N2 gas
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
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DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -10/97