UPG110B Datasheet, PDF (1/3 Pages) NEC – 2-8 GHZ WIDE-BAND AMPLIFIER

2-8 GHz WIDE-BAND AMPLIFIER
UPG110B
UPG110P
FEATURES
• WIDE-BAND: 2 to 8 GHz
• HIGH GAIN: 15 dB at f = 2 to 8 GHz
• MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz
• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω
• HERMETICALLY SEALED PACKAGE ASSURES HIGH
RELIABILITY
DESCRIPTION
The UPG110B is a GaAs monolithic integrated circuit de-
signed for use as a wide-band amplifier from 2 GHz to 8 GHz.
The device is most suitable for the gain stage of microwave
communication systems where high gain characteristics are
required. The UPG110 is available in a 4 pin flat package and
in chip form.
GAIN vs. FREQUENCY AND TEMPERATURE
20
15
10
5
0
-5
-10
0
2
4
6
8
Frequency, f (GHz)
T = -25˚C
T = +25˚C
T = +75˚C
10
ELECTRICAL CHARACTERISTICS¹ (TA = 25 ± 3°C, ZS = ZL = 50 Ω, VDD = +8 V, f = 2.0 to 8.0 GHz)
SYMBOLS
IDD
GP
∆GL
RLIN
RLOUT
ISOL
P1dB
IP3
PART NUMBER
PACKAGE OUTLINE
PARAMETERS
Supply Current
Power Gain
Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power at 1 dB Compression Point
SSB Third Order Intercept Point
UNITS
mA
dB
dB
dB
dB
dB
dBm
dBm
UPG110B/P
FA/CHIP
MIN
TYP
65
135
12
15
6
10
7
10
30
40
10
14
25
Note:
1. When handling the device, a ground strap should be used to prevent electric static discharge (ESD) that can damage the IC.
MAX
180
±1.5
California Eastern Laboratories