UPA1476 Datasheet, PDF (3/6 Pages) NEC – NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
100
80
60
S/b _Limited
40
20
0
50
100
150
TC - Case Temperature - ˚C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NEC
µ PA1476
4
4 Circuits Operation
3 Circuits Operation
3
2 Circuits Operation
1 Circuit Operation
2
1
0
25 50 75 100 125 150
Ta - Ambient Temperature - ˚C
DC CURRENT GAIN vs. COLLECTOR CURRENT
10000
1000
T^{a = 1507˚5C}2^˚_–^{C52˚5C˚C}
100
10
0.01
VCE = 2.0 V
0.1
1
10
IC - Collector Current - A
µPA1476
SAFE OPERATING AREA
10
IC (pulse)
IC (DC)
PW
200
=
100
1
LimDiitsesdipation
s
s
TC = 25 ˚C
0.1 ^{Single Pulse}
1
10
100
VCE - Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
20
1 Circuit Operation
10
0
25 50 75 100 125 150
TC - Case Temperature - ˚C
COLLECTOR SATURATION VOLTAGE
vs. COLLECTOR CURRENT
10
1 ^{Ta = –25 ˚C}
125 ˚C
75 ˚C
25 ˚C
0.1
0.1
IC/IB = 1000
1
–10
IC - Collector Current - A
3