UPA1476 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1476
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1476 is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
• Surge Absorber (Zener Diode) built in.
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
ORDERING INFORMATION
Part Number
µPA1476H
Package
10 Pin SIP
Quality Grade
Standard
2.54
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
1.4
0.5 ±0.1
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
CONNECTION DIAGRAM
3
5
7
9
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
2
4
6
8
Collector to Base Voltage
VCBO 100 ±15 V
1
10
Collector to Emitter Voltage VCEO 100 ±15 V
Emitter to Base Voltage
VEBO
8
V
Collector Current (DC)
IC(DC)
±2 A/unit
(C)
Collector Current (pulse)
IC(pulse)* ±3
A/unit
PIN No.
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
IB(DC)
0.2 A/unit
PT1** 3.5
W
(B)
PT2*** 28
W
TJ
150
˚C
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
R1 R2
(E)
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
R1 =^.. 10 kΩ
R2 =^.. 900 Ω
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
The information in this document is subject to change without notice.
Document No. IC-3565
Date Published November 1994 P
Printed in Japan
©
1994