NEL2035F03-24 Datasheet, PDF (3/12 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEL2035F03-24
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
CLASS AB OPERATION
PARAMETER
Output Power
Collector Efficiency
Linear Gain
3rd Order Intermodulation
SYMBOL
PIdB
ηc
GL
IM3
SPECIFIED CONDITION
f = 1.97 GHz, Iq = 100 mA,
VCC = 24 V, CLASS AB
f = 1.97 GHz, Pout = PIdB, Iq = 100 mA,
VCC = 24 V, CLASS AB
f = 1.97 GHz, Pin = 2 W, Iq = 100 mA,
VCC = 24 V, CLASS AB
f = 1.97 GHz, ∆f = 100 kHz, 30 W PEP,
VCC = 24 V, Iq = 100 mA, CLASS AB
MIN.
30
TYP.
33
MAX.
UNIT
W
40
50
%
9
dB
–33
dBc
CLASS A OPERATION
PARAMETER
Output Power
Collector Efficiency
Linear Gain
3rd Order Intermodulation
SYMBOL
PIdB
ηc
GL
IM3
SPECIFIED CONDITION
f = 1.97 GHz, Iq = 1.5 A,
VCC = 16 V, CLASS A
f = 1.97 GHz, Pout = PIdB, Iq = 1.5 A,
VCC = 16 V, CLASS A
f = 1.97 GHz, Pin = 0.1 W, Iq = 1.5 A,
VCC = 16 V, CLASS A
f = 1.97 GHz, ∆f = 100 kHz, 5 W PEP,
VCC = 16 V, Iq = 1.5 A, CLASS A
MIN.
TYP.
7
MAX.
UNIT
W
30
%
10.7
dB
–33
dBc
3