NEL2035F03-24 Datasheet, PDF (1/12 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

DATA SHEET
SILICON POWER TRANSISTOR
NEL2035F03-24
NPN SILICON EPITAXIAL TRANSISTOR
L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2035F03-24 of NPN epitaxial microwave power transistors
is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and
offers a high degree of reliability.
FEATURES
• High Linear Power and Gain
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
• Emitter Ballasting
• 24 V Operation
OUTLINE DIMENSIONS (Unit: mm)
2.8 ±0.2
2 × φ 3.3 ±0.3
2
1
3
18.9 ±0.3
14.2 ±0.3
6.35 ±0.4
ABSOLUTE MAXIMUM RATING (TA = 25 ˚C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector to Emitter Voltage
Collector Current
Power Dissipation
Thermal Resistance
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCER
VEBO
VCEO
IC
PT
Rth(j-c)
Tj
Tstg
SPECIFIED CONDITION
R = 10 Ω
1 - EMITTER
2 - BASE
3 - COLLECTOR
RATINGS
45
30
3
18
14
79.5
2.2
200
–65 to 150
UNIT
V
V
V
V
A
W
˚C/W
˚C
˚C
Document No. P11584EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996