2SK1824 Datasheet, PDF (3/6 Pages) NEC – N-CHANNEL MOS FET FOR SWITCHING

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
TRANSFER CHARACTERISTICS
300 _{VDS = 3 V}
100 Pulsed
10
150 ˚C
1.0
0.1
0.01
TA = –25 ˚C
2.5 ˚C
7.5 ˚C
0.001
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
13
Pulsed
11
9
ID = 0.1 A
7
5
ID = 10 mA
3
0123 45678
VGS - Gate to Source Voltage - V
2SK1824
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
3.0 cm² × 0.64 mm
Using ceramic substrate
200
160
120
80
40
0
30 60 90 120 150 180
TA - Ambient Temperature - ˚C
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
600
VDS = 3 V
Pulsed
200
TA = 25 ˚C ^{–25 ˚C}
100
50
75 ˚C
150 ˚C
20
10
5
2
0.5 1.0
3.0
10
30
ID - Drain Current - mA
100 200
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
24
VGS = 2.5 V
Pulsed
20
16
12
TA = 150 ˚C
75 ˚C
8
25 ˚C
–25 ˚C
4
0
0.5 1
3
10
30 60
ID - Drain Current - mA
3