2SK1824 Datasheet, PDF (1/6 Pages) NEC – N-CHANNEL MOS FET FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1824
N-CHANNEL MOS FET
FOR SWITCHING
The 2SK1824 is a N-channel vertical type MOS FET that is
driven at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SK1824 is ideal for driving the actuator of power-saving systems,
such as VCR cameras and headphone stereo systems.
Moreover, the 2SK1824 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
FEATURES
• Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
• Can be automatically mounted
• Can be directly driven by 3-V IC
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
PACKAGE DIMENSIONS (in mm)
0.3 ± 0.05
0.1
+0.1
–0.05
D
G
S
0.2
+0.1
–0
0.5 0.5
1.0
1.6 ± 0.1
0 to 0.1
0.6
0.75 ± 0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Internal
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: B1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Topt
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms
Duty cycle ≤ 50 %
3.0 cm² × 0.64 mm, ceramic substrate used
RATING
30
±7
±100
±200
200
150
–55 to +80
–55 to +150
UNIT
V
V
mA
mA
mW
˚C
˚C
˚C
Document No. D11220EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996