2SK1399 Datasheet, PDF (3/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Pulse measurement
80
VGS = 4.5 V
60
5
40
4.0 V
2.5 V
20
0
0
0.5
1
1.5
2
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
2.0
VDS = 3.0 V
ID = 1 µA
1.5
1.0
0.5
0
50
100
150
Tch - Channel Temperature - ˚C
2SK1399
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
250
200
150
100
50
0
0 30 60 90 120 150 180 210 240
TA - Ambient Temperature - ˚C
TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
0
TA = 150˚C
75˚C
25˚C
–25˚C
VDS = 3.0 V
Pulse measurement
1 2 345 6 78
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
VDS = 5.0 V
f = 1 kHz
500
200
100
50
20
10
1
5 10 20 50 100 200 500 1000
ID - Drain Current - mA
Data Sheet D14770EJ2V0DS00
3