2SK1399 Datasheet, PDF (2/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

2SK1399
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Cut-off Current
5 Gate Leakage Current
IDSS
VDS = 50 V, VGS = 0 V
IGSS
VGS = ±7.0 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 3.0 V, ID = 1.0 µA
Forward Transfer Admittance
| yfs | VDS = 3.0 V, ID = 10 mA
Drain to Source On-state Resistance
RDS(on)1 VGS = 2.5 V, ID = 10 mA
RDS(on)2 VGS = 4.0 V, ID = 10 mA
Input Capacitance
Ciss
VDS = 3.0 V
Output Capacitance
Coss
VGS = 0 V
5 ^{Reverse Transfer Capacitance}
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 3.0 V
Rise Time
tr
ID = 20 mA
Turn-off Delay Time
td(off)
VGS(on) = 3.0 V
Fall Time
tf
RG = 10 Ω, RL = 150 Ω
MIN. TYP. MAX. UNIT
10 µA
±5.0 µA
0.9 1.2 1.5 V
20 38
mS
22
40
Ω
14
20
Ω
8
pF
7
pF
3
pF
15
ns
100
ns
30
ns
35
ns
5 TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1µs
Duty Cycle ≤ 1 %
RL
VGS
VGS
Wave Form
10 %
0
VGS(on) ^{90 %}
VDD
ID
90 %
ID
ID
0 ^{10 %}
Wave Form
90 %
10 %
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14770EJ2V0DS00