2SJ605 Datasheet, PDF (3/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ605
! TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
–1000
–100
–10
R^{DS(on) Limited}
ID(pulse) ^PW
100 _µs ^{= 10} µ_s
ID(DC)
1 _ms
LimPoitweder
Dissipation
10
DC
ms
–1
TC = 25˚C
Single Pulse
–0.1
–0.1
–1
–10
VDS - Drain to Source Voltage - V
–100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3˚C/W
10
1
Rth(ch-C) = 1.25˚C/W
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10
100
1000
Data Sheet D14650EJ2V0DS
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