2SJ605 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A)
RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A)
• Low input capacitance
!
Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ605
TO-220AB
2SJ605-S
TO-262
2SJ605-ZJ
2SJ605-Z
TO-263
TO-220SMD^Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
VGSS
m 20
V
ID(DC)
m 65
A
ID(pulse)
m 200
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg –55 to +150 °C
IAS
–45
A
EAS
203
mJ
(TO-262)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
!
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14650EJ2V0DS00 (2nd edition)
The mark ! shows major revised points.
Date Published May 2001 NS CP(K)
Printed in Japan
©
2000