2SJ449 Datasheet, PDF (3/8 Pages) NEC – SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
–100
–10
–1.0
TC^R(=^DaSt(oV2^nG)5^SLi=˚^mC^{–it2e0dPVIoD)w(DeCr)DissipaIDDt1iC(o0p0nu1ls0mLeims)ms1itemPdWs = 100µs}
–0.1 ^{Single Pulse}
–1.0
–10
–100
–1000
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
–100
Pulsed
–10
TA= –25 ˚C
25 ˚C
–1.0
75 ˚C
125 ˚C
–0.1
VDS = –10 V
0
–5
–10
–15
VGS - Gate to Source Voltage - V
2SJ449
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
30
25
20
15
10
5
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
–20
–16
VGS= –20 V
–10 V
–12
–8
–4
0
–5
–10
–15
–20
VDS - Drain to Source Voltage - V
3