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2SJ449 Datasheet, PDF (1/8 Pages) NEC – SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ449
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
⢠Low On-Resistance
RDS(on) = 0.8 ⦠MAX. (@ VGS = â10 V, ID = â3.0 A)
⢠Low Ciss Ciss = 1040 pF TYP.
⢠High Avalanche Capability Ratings
⢠Isolated TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ËC)
Drain to Source Voltage
VDSS
â250
V
Gate to Source Voltage
VGSS
m30
V
Drain Current (DC)
ID(DC)
m6.0
A
Drain Current (pulse)*
ID(pulse)
m24
A
Total Power Dissipation (Tc = 25 ËC) PT1
35
W
Total Power Dissipation (TA = 25 ËC) PT2
2.0
W
Channel Temperature
Tch
150
ËC
Storage Temperature
Tstg
â55 to +150 ËC
Single Avalanche Current**
IAS
â6.0
A
Single Avalanche Energy**
EAS
180 mJ
* PW ⤠10 µs, Duty Cycle ⤠1 %
** Starting Tch = 25 ËC, RG = 25 â¦, VGS = â20 V â 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
1 23
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. D10030EJ1V0DS00
Date Published May 1995 P
Printed in Japan
©
1995
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