2SC5787 Datasheet, PDF (3/22 Pages) NEC – NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD

2SC5787
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
Mounted on Glass Epoxy PCB
(1.08 cm² × 1.0 mm (t) )
125
105
100
75
50
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
f = 1 MHz
0.4
0.3
0.2
25
0.1
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
500 µA 450 µA
30
400 µA
350 µA
300 µA
250 µA
20
200 µA
150 µA
10
100 µA
IB = 50 µA
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
Data Sheet PU10070EJ01V0DS
3