2SC5787 Datasheet, PDF (2/22 Pages) NEC – NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD

2SC5787
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO VEB = 1 V, IC = 0 mA
h Note 1
FE
VCE = 1 V, IC = 5 mA
fT
VCE = 1 V, IC = 20 mA, f = 2 GHz
S21e² VCE = 1 V, IC = 20 mA, f = 2 GHz
NF ^{VCE = 1 V, IC = 5 mA, f = 2 GHz,}
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
B7
50 to 100
MIN. TYP. MAX. Unit
–
–
100
nA
–
–
100
nA
50
–
100
–
17
20
–
GHz
11
13
–
dB
–
1.4
2.5
dB
–
0.22
0.30
pF
2
Data Sheet PU10070EJ01V0DS