2SC4228 Datasheet, PDF (3/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
0
50
100
150
TA – Ambient Temperature – ˚C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
VCE = 3 V
10
0
0.5
1.0
VBE – Base to Emitter Voltage – V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
2.0
1.0
0.5
0.2
0.1
1
2
5
10 20
50
VCB – Collector to Base Voltage – V
2SC4228
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
160 ^µA
20
140 ^µA
15
120 ^µA
100 ^µA
80 ^µA
10
60 µ^A
40 µA
5
IB = 20 µA
0
0.5
1.0
V CE – Collector to Emitter Voltage – V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 3 V
100
50
20
10
0.5 1
5 10
50
IC – Collector Current – mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
VCE = 3 V
f = 2 GHz
8
6
4
2
0
0.5 1
5 10
50
I C – Collector Current – mA
3