2SC4228 Datasheet, PDF (2/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

2SC4228
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|²
NF
MIN.
50
5.5
5.5
TYP.
100
8.0
0.3
7.5
1.9
MAX.
1.0
1.0
250
0.7
3.2
UNIT
µA
µA
GHz
pF
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 5 mA*¹
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCB = 3 V, IE = 0, f = 1 MHz*²
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
*1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
hFE Classification
Rank
Marking
hFE
R43
R43
50 to 100
R44
R44
80 to 160
R45
R45
125 to 250
2