2SC4226 Datasheet, PDF (3/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
200
100
0
50
100
150
TA – Ambient Temperature – °C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
IB =160 µA
140 µA
20
120 µA
15
100 µA
80 µA
10
60 µA
40 µA
5
20 µA
0
5
10
VCE – Collector to Emitter Voltage – V
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
VCE = 3 V
f = 1.0 GHz
10
5
2
1
0.5 1
5 10
50
IC – Collector Current – mA
2SC4226
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
VCE = 3 V
10
0
0.5
1.0
VBE – Base to Emitter Voltage – V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 3 V
100
50
20
10
0.5 1
5 10
50
IC – Collector Current – mA
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
15
VCE = 3 V
f = 1.0 GHz
10
5
0
0.5 1
5 10
50 100
IC – Collector Current – mA
3