2SC4226 Datasheet, PDF (2/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

2SC4226
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
20
V
12
V
3
V
100
mA
150
mW
150
°C
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|²
NF
MIN.
40
3.0
7
TYP.
110
4.5
0.7
9
1.2
MAX.
1.0
1.0
250
1.5
2.5
UNIT
µA
µA
GHz
pF
dB
dB
TEST CONDITION
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 7 mA*¹
VCE = 3 V, IC = 7 mA
VCE = 3 V, IE = 0, f = 1 MHz*²
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
*1 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
Marking
hFE
R23
R23
40 to 80
R24
R24
70 to 140
R25
R25
125 to 250
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