UPA827TF Datasheet, PDF (2/6 Pages) NEC – NPN SILICON EPITAXIAL TWIN TRANSISTOR

UPA827TF
ABSOLUTE MAXIMUM RATINGS¹ (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
5
VCEO Collector to Emitter Voltage V
3
VEBO Emitter to Base Voltage
V
2
IC
Collector Current
mA
10
PT
Total Power Dissipation
1 Element
mW
30
2 Elements
mW
60
TJ
Junction Temperature
°C
150
TSTG Storage Temperature
°C
-65 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
2 elements in total
60mW
50
Per element
30mW
0
50
100
150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
EMITTER VOLTAGE
10
100 μA
8
80 μA
60 μA
6
40 μA
4
lB = 20 μA
2
0
1.0
2.0
3.0
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs.
DC BASE VOLTAGE
50
VCE = 2 V
40
30
20
10
0
0.5
1.0
DC Base Voltage, VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
VCE = 2 V
50
VCE = 1 V
20
10
1
2
5
10
20
50 100
Collector Current, lc (mA)