UPA827TF Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TWIN TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA827TF
FEATURES
• HIGH GAIN WITH LOW OPERATING CURRENT:
|S21E|² = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA
|S21E|² = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA
• SMALL PACKAGE STYLE:
2 NE686 die in a 2 mm x 1.25 mm x 0.6 mm package
• Pb-FREE
DESCRIPTION
The UPA827TF has two built-in low-voltage transistors which
are designed for low-noise amplification in the VHF to UHF
band. The two die are chosen from adjacent locations on the
wafer. These features combined with the pin configuration
make this device ideal for balanced or mirrored applications.
This device is suitable for low voltage/low current, low noise
applications, and its high fT makes it an excellent choice for
portable wireless applications. The thinner package style
allows for higher density designs.
OUTLINE DIMENSIONS (Units in mm)
Package Outline TS06 (Top View)
2.1 ± 0.1
1.25 ± 0.1
1
0.65
2.0 ± 0.2
1.3
2
3
6
0.22
+0.10
- 0.05
5 (All Leads)
4
0.6 ± 0.1
0.45
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0 ~ 0.1
0.13 ± 0.05
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA827TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
μA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE
DC Current Gain¹ at VCE = 2 V, IC = 7 mA
μA
70
fT
Gain Bandwidth (1) at VCE = 2 V, IC = 7 mA, f = 2 GHz
GHz
10
fT
Gain Bandwidth (2) at VCE = 1 V, IC = 5 mA, f = 2 GHz
GHz
8.5
Cre
Feedback Capacitance² at VCB = 2 V, IE = 0, f = 1 MHz
pF
|S21E|²
Insertion Power Gain (1) at VCE = 2 V, IC =7 mA, f = 2 GHz
dB
7.5
|S21E|²
Insertion Power Gain (2) at VCE = 1 V, IC =5 mA, f = 2 GHz
dB
7
TYP
13
12
0.4
9
8.5
NF
Noise Figure (1) at VCE = 2 V, IC = 3 mA, f = 2 GHz
dB
1.5
NF
hFE1/hFE2
Noise Figure (2) at VCE = 1 V, IC = 3 mA, f = 2 GHz
hFE ratio, VCE = 2 V, Ic = 7 mA
hFE1 = Smaller hFE value between Q1 and Q2
hFE2 = Larger hFE value between Q1 and Q2
dB
1.5
0.85
1.0
Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
MAX
0.1
0.1
140
0.6
2
2
California Eastern Laboratories