UPA2707TP Datasheet, PDF (2/7 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

µ PA2707TP
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
1.0
Forward Transfer Admittance ^Note
| yfs | VDS = 10 V, ID = 10 A
12
Drain to Source On-state Resistance ^Note
RDS(on)1 VGS = 10 V, ID = 10 A
RDS(on)2 VGS = 4.5 V, ID = 10 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 10 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 15 V
Gate to Source Charge
QGS
VGS = 5 V
Gate to Drain Charge
Body Diode Forward Voltage ^Note
QGD
VF(S-D)
ID = 19 A
IF = 19 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 19 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
Gate Resistance
RG
f = 1 MHz
Note Pulsed
TYP.
3.3
4.1
6600
970
530
24
29
130
39
52
16
18
0.8
42
41
1.2
MAX.
10
±100
2.5
4.3
5.6
UNIT
µA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Ω
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G17035EJ1V0DS