UPA2707TP Datasheet, PDF (1/7 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2707TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2707TP which has a heat spreader is N-
channel MOS Field Effect Transistor designed for
DC/DC converter and power management applications
of notebook computer.
FEATURES
• Low on-state resistance
RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A)
RDS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)
• Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA2707TP-E1
µ PA2707TP-E1-AZ ^Note
Power HSOP8
Power HSOP8
µ PA2707TP-E2
µ PA2707TP-E2-AZ ^Note
Power HSOP8
Power HSOP8
Note Pb-free (This product does not contain Pb in
external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±42
A
ID(pulse)
±76
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation ^Note2
PT1
40
W
PT2
4.3
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg
−55 to +150
°C
IAS
19
A
EAS
36
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Ambient ^Note
Rth(ch-A)
96.2
Channel to Case
Rth(ch-C)
3.13
Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17035EJ1V0DS00 (1st edition)
Date Published June 2005 NS CP(K)
Printed in Japan
2004